Vishay TrenchFET Dual N-Channel MOSFET, 23.5 A, 60 V Enhancement, 8-Pin SO-8L SQJ968EP-T1_BE3

N
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Subtotal (1 tape of 1 unit)*

MYR6.78

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Tape(s)
Per Tape
1 - 9MYR6.78
10 - 24MYR4.43
25 - 99MYR2.35
100 - 499MYR2.28
500 +MYR2.22

*price indicative

RS Stock No.:
736-655
Mfr. Part No.:
SQJ968EP-T1_BE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Dual N

Maximum Continuous Drain Current Id

23.5A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SO-8L

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.134Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

18.5nC

Maximum Power Dissipation Pd

42W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Width

6.15mm

Standards/Approvals

RoHS

Length

5.13mm

Height

1.07mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
DE

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