STMicroelectronics SCT N-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG
- RS Stock No.:
- 719-468
- Mfr. Part No.:
- SCT018W65G3AG
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
MYR92.37
FREE delivery for orders over RM 150.00
In Stock
- 259 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 4 | MYR92.37 |
| 5 + | MYR89.56 |
*price indicative
- RS Stock No.:
- 719-468
- Mfr. Part No.:
- SCT018W65G3AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCT | |
| Package Type | HIP-247-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 398W | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Forward Voltage Vf | 2.6V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 200°C | |
| Width | 5.15mm | |
| Length | 15.75mm | |
| Height | 20.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCT | ||
Package Type HIP-247-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 398W | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Forward Voltage Vf 2.6V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 200°C | ||
Width 5.15mm | ||
Length 15.75mm | ||
Height 20.15mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Related links
- STMicroelectronics Sct N-Channel Power MOSFET 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG
- STMicroelectronics SiC MOSFET N-Channel 650 V Enhancement, 3-Pin Hip-247 SCT018W65G3AG
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 3-Pin Hip-247 SCTW60N120G2
- STMicroelectronics Sct N-Channel Power MOSFET 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4
- STMicroelectronics SCT N-Channel MOSFET Modules 1200 V Depletion, 3-Pin Hip-247 SCTWA30N120
- STMicroelectronics Sct N-Channel Power MOSFET 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3-7
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 3-Pin Hip-247 SCT040W120G3AG
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 3-Pin Hip-247 SCT025W120G3AG