STMicroelectronics STPOWER Gen3 SiC MOSFET N-Channel, 55 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3-7

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MYR53,902.00

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RS Stock No.:
671-932
Mfr. Part No.:
SCT018H65G3-7
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Series

STPOWER Gen3 SiC MOSFET

Channel Type

N

Maximum Continuous Drain Current (Id)

55 A

Maximum Drain Source Voltage (Vds)

650 V

Channel Mode

Enhancement

Pin Count

7

Package Type

H2PAK-7

Automotive Standard

No

Height

4.8 mm

Length

15.25 mm

Maximum Drain Source Resistance (Rds)

20 mΩ

Maximum Gate Source Voltage (Vgs)

18 V

Maximum Operating Temperature

175 °C

Maximum Power Dissipation (Pd)

385 W

Minimum Operating Temperature

-55 °C

Mount Type

Surface

Standards/Approvals

No

Typical Gate Charge (Qg) @ Vgs

79.4 nC

Width

10.4 mm

COO (Country of Origin):
CN

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