Vishay SI8818EDB Type N-Channel Single MOSFETs, 2.2 A, 30 V Enhancement, 4-Pin PowerPAK SI8818EDB-T2-E1
- RS Stock No.:
- 653-090
- Mfr. Part No.:
- SI8818EDB-T2-E1
- Manufacturer:
- Vishay
This image is representative of the product range
Currently unavailable
Sorry, we don't know when this will be back in stock.
Alternative
This product is not currently available. Here is our alternative recommendation.
1 Tape of 1
MYR1.11
- RS Stock No.:
- 653-090
- Mfr. Part No.:
- SI8818EDB-T2-E1
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SI8818EDB | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.143Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Maximum Power Dissipation Pd | 0.9W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 0.8mm | |
| Height | 0.39mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SI8818EDB | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.143Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Maximum Power Dissipation Pd 0.9W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 0.8mm | ||
Height 0.39mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for ultra-compact, high-efficiency switching in space-constrained systems. It supports up to 30 V drain-source voltage. Packaged in MICRO FOOT 0.8 mm x 0.8 mm, it utilizes TrenchFET technology to deliver low RDS(on), fast switching, and excellent thermal performance.
Pb Free
Halogen free
RoHS compliant
Related links
- Vishay SI8818EDB Type N-Channel Single MOSFETs 30 V Enhancement, 4-Pin PowerPAK
- Vishay SQJ738EP Dual N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK
- Vishay SQJQ140ER Type N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK
- Vishay SQJQ114EL Type N-Channel Single MOSFETs 100 V Enhancement, 4-Pin PowerPAK
- Vishay SIJ4406DP Type N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK SIJ4406DP-T1-GE3
- Vishay SQJ190 Type N-Channel Single MOSFETs 100 V Enhancement, 4-Pin PowerPAK
- Vishay SQJ738EP Dual N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK SQJ738EP-T1_GE3
- Vishay SQJQ140ER Type N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK SQJQ140ER-T1_GE3