onsemi UF3 N-Channel Single MOSFETs, 7.6 A, 1.2 kV Enhancement, 3-Pin TO-247-3 UF3C120400K3S
- RS Stock No.:
- 648-529
- Mfr. Part No.:
- UF3C120400K3S
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 bag of 2 units)*
MYR130.65
FREE delivery for orders over RM 150.00
Temporarily out of stock
- 600 unit(s) shipping from 17 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Bag* |
|---|---|---|
| 2 - 8 | MYR65.325 | MYR130.65 |
| 10 + | MYR64.02 | MYR128.04 |
*price indicative
- RS Stock No.:
- 648-529
- Mfr. Part No.:
- UF3C120400K3S
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7.6A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | UF3 | |
| Package Type | TO-247-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 515mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.03mm | |
| Width | 15.9mm | |
| Length | 20.96mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7.6A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series UF3 | ||
Package Type TO-247-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 515mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 175°C | ||
Height 5.03mm | ||
Width 15.9mm | ||
Length 20.96mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CH
The ON Semiconductor EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and super junction devices. Ideal for switching inductive loads.
On-resistance RDS(on)
Maximum operating temperature of 175 °C
Excellent Reverse Recover
Low Gate Charge
Related links
- ROHM SCT4018KWA N-Channel Single MOSFETs 1.2 kV Enhancement, 8-Pin TO-263-7LA SCT4018KWATL
- ROHM SCT4036KWA N-Channel Single MOSFETs 1.2 kV Enhancement, 8-Pin TO-263-7LA SCT4036KWATL
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 3-Pin Hip-247 SCTW60N120G2
- Infineon CoolMOS N-Channel Single MOSFETs 600 V Enhancement, 3-Pin PG-TO-247-3 IPW60R120CM8XKSA1
- STMicroelectronics SCTW70N N-Channel MOSFET 1.2 kV Enhancement, 3-Pin Hip-247 SCTW70N120G2V
- ROHM N-Channel MOSFET 1.2 kV Enhancement, 3-Pin TO-247
- ROHM N-Channel MOSFET 1.2 kV Enhancement, 3-Pin TO-247 SCT4036KEHRC11
- Infineon IMW1 N-Channel MOSFET 1.2 kV Enhancement, 3-Pin TO-247 IMW120R350M1HXKSA1