onsemi NTT N-Channel Single MOSFETs, 178 A, 40 V Enhancement, 8-Pin WDFN8 NTTFS1D4N04XMTAG
- RS Stock No.:
- 648-510
- Mfr. Part No.:
- NTTFS1D4N04XMTAG
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 5 units)*
MYR36.39
FREE delivery for orders over RM 150.00
Temporarily out of stock
- 1,500 unit(s) shipping from 06 January 2027
- Plus 1,500 unit(s) shipping from 07 July 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tape* |
|---|---|---|
| 5 - 45 | MYR7.278 | MYR36.39 |
| 50 - 245 | MYR4.512 | MYR22.56 |
| 250 - 495 | MYR2.614 | MYR13.07 |
| 500 + | MYR2.544 | MYR12.72 |
*price indicative
- RS Stock No.:
- 648-510
- Mfr. Part No.:
- NTTFS1D4N04XMTAG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 178A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | WDFN8 | |
| Series | NTT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.43mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Typical Gate Charge Qg @ Vgs | 35.4nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Pb-Free | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 178A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type WDFN8 | ||
Series NTT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.43mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Typical Gate Charge Qg @ Vgs 35.4nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Pb-Free | ||
Width 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in applications.
Low RDS(on)
Low Capacitance
Small Footprint
Related links
- onsemi NTT N-Channel Single MOSFETs 40 V Enhancement, 8-Pin WDFN8 NTTFS4D9N04XMTAG
- onsemi NTT N-Channel MOSFET 1.2 kV N, 8-Pin WDFN NTTFS012N10MDTAG
- onsemi NTT N-Channel MOSFET 1.2 kV N, 8-Pin WDFN
- Vishay SQS146 N-Channel Single MOSFETs 40 V Enhancement, 8-Pin PowerPAK
- ROHM RS7N160 N-Channel Single MOSFETs 80 V Enhancement, 8-Pin DFN5060-8S RS7N160BHTB1
- Vishay SQS146 N-Channel Single MOSFETs 40 V Enhancement, 8-Pin PowerPAK SQS146ELNW-T1_GE3
- Vishay SQS178EL N-Channel Single MOSFETs 72 V Enhancement, 8-Pin PowerPAK SQS178ELNW-T1_GE3
- Vishay SQS174ELNW N-Channel Single MOSFETs 72 V Enhancement, 8-Pin PowerPAK SQS174ELNW-T1_GE3