ROHM AG096F Type N-Channel Single MOSFETs, 59 A, 100 V Enhancement, 3-Pin TO-252 AG096FPD3HRBTL
- RS Stock No.:
- 646-618
- Mfr. Part No.:
- AG096FPD3HRBTL
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 5 units)*
MYR26.86
FREE delivery for orders over RM 500.00
In Stock
- 45 unit(s) ready to ship from another location
- Plus 100 unit(s) shipping from 11 June 2026
- Plus 2,500 unit(s) shipping from 19 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tape* |
|---|---|---|
| 5 - 45 | MYR5.372 | MYR26.86 |
| 50 - 245 | MYR4.734 | MYR23.67 |
| 250 - 495 | MYR4.238 | MYR21.19 |
| 500 + | MYR3.364 | MYR16.82 |
*price indicative
- RS Stock No.:
- 646-618
- Mfr. Part No.:
- AG096FPD3HRBTL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | AG096F | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17.3nC | |
| Maximum Power Dissipation Pd | 76W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series AG096F | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17.3nC | ||
Maximum Power Dissipation Pd 76W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard AEC-Q101 | ||
The ROHM Automotive grade MOSFET is AEC-Q101 qualified. Ideal for Automotive Systems. This MOSFETs are 100 percent avalanche tested.
Low on resistance
Pd free plating
RoHS compliant
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