Infineon HEXFET N-Channel MOSFET, 85 A, 150 V Enhancement, 3-Pin TO-220 IRFB4321PBF
- RS Stock No.:
- 495-568
- Mfr. Part No.:
- IRFB4321PBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
MYR18.54
FREE delivery for orders over RM 150.00
In Stock
- Plus 994 unit(s) shipping from 19 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 12 | MYR18.54 |
| 13 - 24 | MYR18.18 |
| 25 + | MYR17.64 |
*price indicative
- RS Stock No.:
- 495-568
- Mfr. Part No.:
- IRFB4321PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 85A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Maximum Power Dissipation Pd | 350W | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.02mm | |
| Length | 10.66mm | |
| Standards/Approvals | RoHS | |
| Width | 4.82mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 85A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Maximum Power Dissipation Pd 350W | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Maximum Operating Temperature 175°C | ||
Height 9.02mm | ||
Length 10.66mm | ||
Standards/Approvals RoHS | ||
Width 4.82mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 150V Maximum Drain-Source Voltage, 85A Maximum Continuous Drain Current - IRFB4321PBF
This MOSFET is a through‑hole power transistor designed for high‑current switching in demanding environments. It is an N‑channel enhancement device supplied in a TO‑220 package for straightforward PCB mounting. The component supports wide operating temperatures suited to industrial contexts and conforms to RoHS.
Features and Benefits:
• 350W maximum power dissipation enables heavy‑load handling
• 15mΩ Rds(on) minimises conduction losses
• 71 nC typical gate charge supports Rapid switching control
• 30V maximum gate-source voltage allows robust gate drive
• -55°C to 175°C operating range sustains harsh environments
• 15mΩ Rds(on) minimises conduction losses
• 71 nC typical gate charge supports Rapid switching control
• 30V maximum gate-source voltage allows robust gate drive
• -55°C to 175°C operating range sustains harsh environments
Applications
• Suitable for high‑current power‑supply output stages
• Ideal for motor‑drive switching elements
• Used with heatsinked regulators in industrial systems
• Can be used for DC-DC converter switching
• Suitable for through‑hole replacement in legacy boards
• Ideal for motor‑drive switching elements
• Used with heatsinked regulators in industrial systems
• Can be used for DC-DC converter switching
• Suitable for through‑hole replacement in legacy boards
What mounting method does it use?
It is supplied in a TO‑220 package intended for through‑hole mounting and heatsinking.
What kind of channel and switching mode does it use?
The device is an N‑channel, enhancement‑mode transistor designed for fast switching in power circuits.
What are the limits for gate and drain voltages?
The gate may be driven up to 30V and the drain-source voltage can reach 150V.
How much continuous current can it handle and what is the thermal capacity?
It supports 85A continuous drain current with a maximum power dissipation of 350W.
Are there environmental or approval considerations for use?
The component meets RoHS requirements and operates across a temperature span from -55°C to 175°C.
Related links
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220 IRFB4321PBF
- Infineon HEXFET N-Channel MOSFET 150 V TO-263 IRFS4321TRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IRF1010NSTRLPBF
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220 IRFB4615PBF
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220 IRF3415PBF
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220