onsemi NTD2955 Type P-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252 NTD2955T4G
- RS Stock No.:
- 463-038
- Mfr. Part No.:
- NTD2955T4G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR48.12
FREE delivery for orders over RM 500.00
In Stock
- 120 unit(s) ready to ship from another location
- Plus 2,980 unit(s) shipping from 26 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 620 | MYR4.812 | MYR48.12 |
| 630 - 1240 | MYR4.716 | MYR47.16 |
| 1250 + | MYR4.623 | MYR46.23 |
*price indicative
- RS Stock No.:
- 463-038
- Mfr. Part No.:
- NTD2955T4G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTD2955 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.25V | |
| Maximum Power Dissipation Pd | 55W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.38mm | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTD2955 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.25V | ||
Maximum Power Dissipation Pd 55W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 2.38mm | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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