ROHM N-Channel MOSFET, 2 A, 60 V, 4-Pin MPT RJP020N06T100
- RS Stock No.:
- 363-483P
- Mfr. Part No.:
- RJP020N06T100
- Manufacturer:
- ROHM
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- RS Stock No.:
- 363-483P
- Mfr. Part No.:
- RJP020N06T100
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | MPT | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 240 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Length | 4.5mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 5 nC @ 4 V | |
| Width | 2.5mm | |
| Height | 1.5mm | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type MPT | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 240 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Length 4.5mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 5 nC @ 4 V | ||
Width 2.5mm | ||
Height 1.5mm | ||
- COO (Country of Origin):
- JP