Infineon IMZC120 Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R012M2HXKSA1

Bulk discount available

Subtotal (1 unit)*

MYR202.34

Add to Basket
Select or type quantity
In Stock
  • Plus 240 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
1 - 9MYR202.34
10 - 99MYR182.10
100 +MYR167.94

*price indicative

RS Stock No.:
351-922
Mfr. Part No.:
IMZC120R012M2HXKSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

91A

Maximum Drain Source Voltage Vds

1200V

Series

IMZC120

Package Type

PG-TO-247-4-U07

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

480W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

124nC

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon CoolSiC MOSFET discrete 1200 V, 12 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Short circuit withstand time 2 μs

Benchmark gate threshold voltage 4.2 V

Robust against parasitic turn on

Very low switching losses

Tighter VGS(th) parameter distribution

Related links