Infineon F3L6MR Type N-Channel MOSFET, 375 A, 2000 V Enhancement AG-EASY2B F3L6MR20W2M1HB70BPSA1
- RS Stock No.:
- 351-915
- Mfr. Part No.:
- F3L6MR20W2M1HB70BPSA1
- Manufacturer:
- Infineon
Subtotal (1 unit)*
MYR2,928.61
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In Stock
- Plus 15 unit(s) shipping from 05 January 2026
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Units | Per Unit |
|---|---|
| 1 + | MYR2,928.61 |
*price indicative
- RS Stock No.:
- 351-915
- Mfr. Part No.:
- F3L6MR20W2M1HB70BPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 375A | |
| Maximum Drain Source Voltage Vds | 2000V | |
| Series | F3L6MR | |
| Package Type | AG-EASY2B | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 20mW | |
| Forward Voltage Vf | 6.15V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 62.8mm | |
| Width | 48 mm | |
| Standards/Approvals | IEC 60747, IEC 60068, IEC 60749 | |
| Height | 12.255mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 375A | ||
Maximum Drain Source Voltage Vds 2000V | ||
Series F3L6MR | ||
Package Type AG-EASY2B | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 20mW | ||
Forward Voltage Vf 6.15V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 62.8mm | ||
Width 48 mm | ||
Standards/Approvals IEC 60747, IEC 60068, IEC 60749 | ||
Height 12.255mm | ||
Automotive Standard No | ||
The Infineon Easy pack 2B CoolSiC MOSFET 3-level module 2000 V, 6 mΩ with NTC temperature sensor, Press FIT Contact Technology and aluminum nitride ceramic.
Very low module stray inductance
Press FIT pins
Integrated NTC temperature sensor
Wide gate source voltage range
Low switching & conduction losses
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