onsemi NXH N-Channel MOSFET, 76 A, 40 V Enhancement, 56-Pin Power 56 FDMS8333LN
- RS Stock No.:
- 277-063
- Mfr. Part No.:
- FDMS8333LN
- Manufacturer:
- onsemi
This image is representative of the product range
Get a bulk buy discount
Add 100 more to save MYR19.90
View bulk pricing optionsSubtotal (1 tape of 10 units)*
MYR39.55
FREE delivery for orders over RM 150.00
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tape* | Saving |
|---|---|---|---|
| 10 - 90 | MYR3.955 | MYR39.55 | - |
| 100 - 240 | MYR3.756 | MYR37.56 | MYR19.90 |
| 250 - 490 | MYR3.479 | MYR34.79 | MYR119.00 |
| 500 - 990 | MYR3.202 | MYR32.02 | MYR376.50 |
| 1000 + | MYR3.088 | MYR30.88 | MYR867.00 |
*price indicative
- RS Stock No.:
- 277-063
- Mfr. Part No.:
- FDMS8333LN
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | Power 56 | |
| Series | NXH | |
| Mount Type | Surface | |
| Pin Count | 56 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69W | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.15mm | |
| Height | 1.1mm | |
| Standards/Approvals | RoHS | |
| Width | 5.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type Power 56 | ||
Series NXH | ||
Mount Type Surface | ||
Pin Count 56 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69W | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Length 6.15mm | ||
Height 1.1mm | ||
Standards/Approvals RoHS | ||
Width 5.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor N Channel MOSFET has been designed specifically to improve the overall efficiency and to minimise switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimised for low gate charge, low RDS(ON), fast switching speed and body and body diode reverse recovery performance.
100% UIL tested
MSL 1 robust package design
RoHS compliant
Related links
- onsemi NXH N-Channel MOSFET 1.2 kV Enhancement, 18-Pin PIM18 NXH015P120M3F1PTG
- onsemi NXH N-Channel MOSFET 1.2 kV Enhancement, 34-Pin PIM34 NXH011F120M3F2PTHG
- onsemi NXH N-Channel MOSFET 1.2 kV Enhancement, 36-Pin PIM36 NXH006P120M3F2PTHG
- onsemi NXH N-Channel MOSFET 1.2 kV Enhancement, 34-Pin PIM34 NXH007F120M3F2PTHG
- onsemi NXH N-Channel MOSFET 1.2 kV Enhancement, 18-Pin PIM18 NXH010P120M3F1PTG
- onsemi NXH N-Channel MOSFET 1.2 kV Enhancement, 18-Pin PIM18 NXH008P120M3F1PTG
- onsemi NXH N-Channel MOSFET 1.2 kV Enhancement, 18-Pin PIM18 NXH030P120M3F1PTG
- onsemi NXH N-Channel MOSFET 1.2 kV Enhancement, 22-Pin PIM22 NXH030F120M3F1PTG