onsemi NTBL Type N-Channel MOSFET, 46 A, 650 V Enhancement, 8-Pin HPSOF-8L NTBL060N065SC1
- RS Stock No.:
- 220-562
- Mfr. Part No.:
- NTBL060N065SC1
- Manufacturer:
- onsemi
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MYR36.07
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | MYR36.07 |
| 10 - 99 | MYR32.47 |
| 100 - 499 | MYR29.96 |
| 500 - 999 | MYR27.79 |
| 1000 + | MYR22.57 |
*price indicative
- RS Stock No.:
- 220-562
- Mfr. Part No.:
- NTBL060N065SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTBL | |
| Package Type | HPSOF-8L | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22.6 V | |
| Maximum Power Dissipation Pd | 170W | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.38 mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 2.3mm | |
| Length | 9.9mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTBL | ||
Package Type HPSOF-8L | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22.6 V | ||
Maximum Power Dissipation Pd 170W | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.3V | ||
Maximum Operating Temperature 175°C | ||
Width 10.38 mm | ||
Standards/Approvals RoHS Compliant | ||
Height 2.3mm | ||
Length 9.9mm | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Speed Switching with Low Capacitance
RoHS Compliant
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