Nexperia PSM Type N-Channel MOSFET, 180 A, 40 V Enhancement, 5-Pin LFPAK PSMN2R0-40YLBX

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Subtotal (1 tape of 1 unit)*

MYR6.08

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Tape(s)
Per Tape
1 - 9MYR6.08
10 - 99MYR5.50
100 - 499MYR5.04
500 - 999MYR4.66
1000 +MYR4.20

*price indicative

Packaging Options:
RS Stock No.:
219-518
Mfr. Part No.:
PSMN2R0-40YLBX
Manufacturer:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Series

PSM

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

2.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

166W

Maximum Gate Source Voltage Vgs

10 V

Typical Gate Charge Qg @ Vgs

18nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET is utilizing Advanced TrenchMOS Super junction technology. It is designed for high-performance power switching applications. Key applications include automation, robotics, DC-to-DC converters, brushless DC motor control, industrial load-switching, eFuse, and inrush management.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Wave solder able

Superfast switching with soft recovery

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