Nexperia NSF060120D7A0 N-Channel MOSFET, 38.27 A, 1.2 kV Enhancement, 7-Pin TO-263 NSF060120D7A0J
- RS Stock No.:
- 219-446
- Mfr. Part No.:
- NSF060120D7A0J
- Manufacturer:
- Nexperia
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MYR81.22
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| 100 + | MYR67.38 |
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- RS Stock No.:
- 219-446
- Mfr. Part No.:
- NSF060120D7A0J
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 38.27A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-263 | |
| Series | NSF060120D7A0 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 38.27A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-263 | ||
Series NSF060120D7A0 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
- COO (Country of Origin):
- CN
The Nexperia SiC Power MOSFET comes in a compact 7-pin TO-263 plastic package for surface mounting on PCBs. Its excellent RDS(on) temperature stability and fast switching speed make it ideal for high-power, high-voltage industrial applications, including electric vehicle charging infrastructure, photovoltaic inverters, and motor drives.
Fast reverse recovery
Fast switching speed
Temperature independent turn off switching losses
Very fast and robust intrinsic body diode
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