STMicroelectronics STL125N10F8AG Type N-Channel MOSFET, 125 A, 100 V Enhancement, 8-Pin PowerFLAT STL125N10F8AG

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MYR17.27

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Units
Per Unit
1 - 9MYR17.27
10 - 99MYR15.52
100 - 499MYR14.36
500 - 999MYR13.32
1000 +MYR11.90

*price indicative

Packaging Options:
RS Stock No.:
214-996
Mfr. Part No.:
STL125N10F8AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

125A

Maximum Drain Source Voltage Vds

100V

Series

STL125N10F8AG

Package Type

PowerFLAT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

56nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, AEC-Q101

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for Faster and more efficient switching.

Low gate charge Qg

Wettable flank package

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