STMicroelectronics SCT N-Channel MOSFET, 40 A, 1.2 kV Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4
- RS Stock No.:
- 214-957
- Mfr. Part No.:
- SCT040W120G3-4
- Manufacturer:
- STMicroelectronics
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 214-957
- Mfr. Part No.:
- SCT040W120G3-4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Hip-247-4 | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 312W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -10V, 22V | |
| Forward Voltage Vf | 1.2kV | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | RoHS, ECOPACK2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Hip-247-4 | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 312W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -10V, 22V | ||
Forward Voltage Vf 1.2kV | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals RoHS, ECOPACK2 | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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