STMicroelectronics SCT060HU N-Channel MOSFET, 30 A, 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG
- RS Stock No.:
- 152-111
- Mfr. Part No.:
- SCT060HU75G3AG
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 152-111
- Mfr. Part No.:
- SCT060HU75G3AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | HU3PAK | |
| Series | SCT060HU | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Forward Voltage Vf | 3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 18V | |
| Maximum Operating Temperature | 175°C | |
| Length | 14.1mm | |
| Width | 19mm | |
| Height | 3.6mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type HU3PAK | ||
Series SCT060HU | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Forward Voltage Vf 3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 18V | ||
Maximum Operating Temperature 175°C | ||
Length 14.1mm | ||
Width 19mm | ||
Height 3.6mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Related links
- STMicroelectronics SCT N-Channel MOSFET 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG
- STMicroelectronics SCT N-Channel Power MOSFET 1.2 kV Enhancement, 7-Pin HU3PAK SCT070HU120G3AG
- STMicroelectronics STH N-Channel MOSFET 30 V Enhancement, 7-Pin HU3PAK
- STMicroelectronics N-Channel STHU60 N-Channel MOSFET 600 V Enhancement, 7-Pin HU3PAK STHU60N046DM9AG
- STMicroelectronics STH N-Channel MOSFET 30 V Enhancement, 7-Pin HU3PAK STHU32N65DM6AG
- STMicroelectronics Sct N-Channel Power MOSFET 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG
- STMicroelectronics STPOWER Gen3 SiC MOSFET N-Channel 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG
- STMicroelectronics STHU36N N-Channel MOSFET 600 V, 7-Pin HU3PAK STHU36N60DM6AG