STMicroelectronics STripFET II Type N-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 151-907P
- Mfr. Part No.:
- STD12NF06LT4
- Manufacturer:
- STMicroelectronics
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Subtotal 100 units (supplied on a continuous strip)*
MYR328.50
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In Stock
- 1,990 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 100 - 240 | MYR3.285 |
| 250 - 490 | MYR3.046 |
| 500 - 990 | MYR2.801 |
| 1000 + | MYR2.701 |
*price indicative
- RS Stock No.:
- 151-907P
- Mfr. Part No.:
- STD12NF06LT4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STripFET II | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.1mm | |
| Height | 2.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STripFET II | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.1mm | ||
Height 2.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET, It is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in Advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge