STMicroelectronics MDmesh II Type N-Channel MOSFET, 2.2 A, 600 V Enhancement, 8-Pin PowerFLAT (3.3 x 3.3) HV STL3NM60N

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Subtotal (1 tape of 10 units)*

MYR30.78

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Units
Per Unit
Per Tape*
10 - 90MYR3.078MYR30.78
100 - 240MYR2.927MYR29.27
250 - 490MYR2.711MYR27.11
500 - 990MYR2.49MYR24.90
1000 +MYR2.402MYR24.02

*price indicative

Packaging Options:
RS Stock No.:
151-423
Mfr. Part No.:
STL3NM60N
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

600V

Series

MDmesh II

Package Type

PowerFLAT (3.3 x 3.3) HV

Pin Count

8

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Power Dissipation Pd

22W

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

9.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MY
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance. It is therefore suitable for the most demanding high efficiency converters.

100% avalanche tested

Low input capacitance and gate charge

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