onsemi MMBFJ309LT1G N-Channel JFET, 25 V, Idss 12 to 30mA, 3-Pin SOT-23
- RS Stock No.:
- 773-7819
- Mfr. Part No.:
- MMBFJ309LT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR9.06
FREE delivery for orders over RM 500.00
In Stock
- Plus 9,820 unit(s) shipping from 05 January 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 740 | MYR0.906 | MYR9.06 |
| 750 - 1490 | MYR0.887 | MYR8.87 |
| 1500 + | MYR0.859 | MYR8.59 |
*price indicative
- RS Stock No.:
- 773-7819
- Mfr. Part No.:
- MMBFJ309LT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Idss Drain-Source Cut-off Current | 12 to 30mA | |
| Maximum Drain Source Voltage | 25 V | |
| Transistor Configuration | Single | |
| Configuration | Single | |
| Mounting Type | Surface Mount | |
| Package Type | SOT-23 | |
| Pin Count | 3 | |
| Source Gate On-Capacitance | 5pF | |
| Dimensions | 3.04 x 1.4 x 1.01mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.01mm | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Idss Drain-Source Cut-off Current 12 to 30mA | ||
Maximum Drain Source Voltage 25 V | ||
Transistor Configuration Single | ||
Configuration Single | ||
Mounting Type Surface Mount | ||
Package Type SOT-23 | ||
Pin Count 3 | ||
Source Gate On-Capacitance 5pF | ||
Dimensions 3.04 x 1.4 x 1.01mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.01mm | ||
Length 3.04mm | ||
Width 1.4mm | ||
Maximum Operating Temperature +150 °C | ||
N-channel JFET, ON Semiconductor
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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