Infineon FS75R07W2E3B11ABOMA1 Array 6 IGBT Transistor Module, 95 A 650 V ACEPACK 2
- RS Stock No.:
- 259-1503
- Mfr. Part No.:
- FS75R07W2E3B11ABOMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
MYR295.73
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- Shipping from 24 June 2026
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Units | Per Unit |
|---|---|
| 1 - 4 | MYR295.73 |
| 5 - 9 | MYR289.82 |
| 10 - 29 | MYR272.86 |
| 30 - 49 | MYR272.80 |
| 50 + | MYR267.83 |
*price indicative
- RS Stock No.:
- 259-1503
- Mfr. Part No.:
- FS75R07W2E3B11ABOMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 95 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 275 W | |
| Configuration | Array 6 | |
| Package Type | ACEPACK 2 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 95 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 275 W | ||
Configuration Array 6 | ||
Package Type ACEPACK 2 | ||
The Infineon easy pack 2B modules with trenchstop IGBT3, emitter controlled 3 diode and PressFIT / NTC.
Increased blocking voltage capability to 650V
Low switching Losses
Low VCEsat
Trench IGBT 3
Al2O3 substrate with low thermal resistance
High power density
Low switching Losses
Low VCEsat
Trench IGBT 3
Al2O3 substrate with low thermal resistance
High power density
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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