Bourns BIDNW30N60H3 Single Diode IGBT, 30 A 600 V TO-247N

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Subtotal (1 pack of 2 units)*

MYR33.57

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Units
Per Unit
Per Pack*
2 - 8MYR16.785MYR33.57
10 - 48MYR16.445MYR32.89
50 - 98MYR16.115MYR32.23
100 - 248MYR15.79MYR31.58
250 +MYR15.475MYR30.95

*price indicative

Packaging Options:
RS Stock No.:
253-3503
Mfr. Part No.:
BIDNW30N60H3
Manufacturer:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

230 W

Configuration

Single Diode

Package Type

TO-247N

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.

600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Low switching loss
Fast switching
RoHS compliant

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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