STMicroelectronics STGW30NC60WD, N-Channel IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

MYR603.30

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30 - 30MYR20.11MYR603.30-
60 - 90MYR19.668MYR590.042%
120 +MYR19.306MYR579.183%

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RS Stock No.:
168-7752
Mfr. Part No.:
STGW30NC60WD
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

200W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

150°C

Width

15.75mm

Standards/Approvals

JEDEC Standard JESD97

Height

20.15mm

Length

14.8mm

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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