Bourns BIDW20N60T IGBT, 40 A 600 V TO-247
- RS Stock No.:
- 253-3505
- Mfr. Part No.:
- BIDW20N60T
- Manufacturer:
- Bourns
Bulk discount available
Subtotal (1 pack of 2 units)*
MYR29.99
FREE delivery for orders over RM 500.00
In Stock
- 2,192 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | MYR14.995 | MYR29.99 |
| 10 - 48 | MYR13.48 | MYR26.96 |
| 50 - 98 | MYR12.76 | MYR25.52 |
| 100 - 248 | MYR11.095 | MYR22.19 |
| 250 + | MYR10.865 | MYR21.73 |
*price indicative
- RS Stock No.:
- 253-3505
- Mfr. Part No.:
- BIDW20N60T
- Manufacturer:
- Bourns
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Bourns | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 192W | |
| Package Type | TO-247 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | BIDW20N60T | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Bourns | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 192W | ||
Package Type TO-247 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Series BIDW20N60T | ||
Automotive Standard No | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower conduction loss and fewer switching losses. In addition, this structure provides a positive temperature coefficient.
600 V, 20 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
Low switching loss
RoHS compliant
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