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Infineon FP25R12W2T4B11BOMA1 IGBT Module, 39 A 1200 V

RS Stock No.:: 244-5389
Mfr. Part No.:: FP25R12W2T4B11BOMA1
Manufacturer:: Infineon

Infineon FP25R12W2T4B11BOMA1 IGBT Module, 39 A 1200 V

Bulk discount available

Subtotal (1 tray of 15 units)*

MYR2,404.125

FREE delivery for orders over RM 500.00

Temporarily out of stock

Shipping from 20 April 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Tray*
15 - 15	MYR160.275	MYR2,404.13
30 - 30	MYR157.07	MYR2,356.05
45 +	MYR153.928	MYR2,308.92

*price indicative

RS Stock No.:: 244-5389
Mfr. Part No.:: FP25R12W2T4B11BOMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	39 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	+/-20V
	Number of Transistors	7
	Maximum Power Dissipation	175 W

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 39 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage +/-20V
	Number of Transistors 7
	Maximum Power Dissipation 175 W

Datasheet - FP25R12W2T4B11BOMA1

The infineon IGBT module the maximum rated repetitive peak collector current is 50 A and maximum collector-emitter saturation voltag 2.25 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF

Infineon FP25R12W2T4B11BOMA1 IGBT Module, 39 A 1200 V

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