Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

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Subtotal (1 tube of 500 units)*

MYR2,935.50

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Units
Per Unit
Per Tube*
500 - 500MYR5.871MYR2,935.50
1000 - 1000MYR5.695MYR2,847.50
1500 +MYR5.467MYR2,733.50

*price indicative

RS Stock No.:
242-0977
Mfr. Part No.:
IGP20N65H5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

42 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

1

Maximum Power Dissipation

125 W

Configuration

Single

Package Type

TO-220-3

The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.

Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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