Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

View all IGBTs
Bulk discount available

Subtotal (1 pack of 2 units)*

MYR15.42

Add to Basket
Select or type quantity
In Stock
  • 280 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
2 - 8MYR7.71MYR15.42
10 - 98MYR7.325MYR14.65
100 - 248MYR6.96MYR13.92
250 - 498MYR6.615MYR13.23
500 +MYR6.29MYR12.58

*price indicative

Packaging Options:
RS Stock No.:
242-0978
Mfr. Part No.:
IGP20N65H5XKSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

42 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

125 W

Number of Transistors

1

Package Type

TO-220-3

Configuration

Single

The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.

Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links