Infineon IGBT, 40 A 650 V TO-220, Through Hole
- RS Stock No.:
- 258-0988
- Mfr. Part No.:
- IGP40N65F5XKSA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 tube of 50 units)*
MYR464.50
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Temporarily out of stock
- 950 unit(s) shipping from 08 June 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | MYR9.29 | MYR464.50 |
| 100 - 100 | MYR8.362 | MYR418.10 |
| 150 + | MYR7.525 | MYR376.25 |
*price indicative
- RS Stock No.:
- 258-0988
- Mfr. Part No.:
- IGP40N65F5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Length | 29.95mm | |
| Standards/Approvals | JEDEC | |
| Height | 4.57mm | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Length 29.95mm | ||
Standards/Approvals JEDEC | ||
Height 4.57mm | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon hard-switching 650 V, 40 A TRENCHSTOP 5 IGBT discrete in TO-247 package for high efficiency demands. Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability.
00mV reduction in V CE(sat)
Low C OES/E OSS
Mild positive temperature coefficient V CE(sat)
Temperature stability of V f