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Infineon IKW30N65H5XKSA1 IGBT, 55 A 650 V, 3-Pin PG-TO247-3

RS Stock No.:: 215-6673
Mfr. Part No.:: IKW30N65H5XKSA1
Manufacturer:: Infineon

Infineon IKW30N65H5XKSA1 IGBT, 55 A 650 V, 3-Pin PG-TO247-3

Bulk discount available

Subtotal (1 pack of 5 units)*

MYR86.64

FREE delivery for orders over RM 500.00

In Stock

Plus 60 unit(s) shipping from 26 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
5 - 5	MYR17.328	MYR86.64
10 - 95	MYR15.886	MYR79.43
100 - 245	MYR14.67	MYR73.35
250 - 495	MYR13.618	MYR68.09
500 +	MYR13.242	MYR66.21

*price indicative

RS Stock No.:: 215-6673
Mfr. Part No.:: IKW30N65H5XKSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	55 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20 V, ±30 V
	Maximum Power Dissipation	188 W
	Package Type	PG-TO247-3
	Pin Count	3

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 55 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20 V, ±30 V
	Maximum Power Dissipation 188 W
	Package Type PG-TO247-3
	Pin Count 3

Datasheet-IKW30N65H5XKSA1

The Infineon 650v duopack insulated-gate bipolar transistor is a diode of fifth generation high speed switching series.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

Infineon IKW30N65H5XKSA1 IGBT, 55 A 650 V, 3-Pin PG-TO247-3

FREE delivery for orders over RM 500.00

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