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Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

RS Stock No.:: 215-6648
Mfr. Part No.:: IKB15N65EH5ATMA1
Manufacturer:: Infineon

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

Bulk discount available

Subtotal (1 pack of 5 units)*

MYR63.56

FREE delivery for orders over RM 500.00

In Stock

920 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
5 - 5	MYR12.712	MYR63.56
10 - 95	MYR11.67	MYR58.35
100 - 245	MYR10.772	MYR53.86
250 - 495	MYR9.994	MYR49.97
500 +	MYR9.708	MYR48.54

*price indicative

RS Stock No.:: 215-6648
Mfr. Part No.:: IKB15N65EH5ATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	30 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20 V, ±30 V
	Maximum Power Dissipation	105 W
	Package Type	PG-TO263-3
	Pin Count	3

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 30 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20 V, ±30 V
	Maximum Power Dissipation 105 W
	Package Type PG-TO263-3
	Pin Count 3

Datasheet-IKB15N65EH5ATMA1

The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

FREE delivery for orders over RM 500.00

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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