Infineon BFQ19SH6327XTSA1 RF Bipolar Transistor, 120 mA NPN, 20 V, 3-Pin SOT-89
- RS Stock No.:
- 260-5067
- Mfr. Part No.:
- BFQ19SH6327XTSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (10 units, in packs of 10)*
MYR17.05
FREE delivery for orders over RM 150.00
Temporarily out of stock
- 4,000 unit(s) shipping from 03 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | MYR1.705 | MYR17.05 |
| 50 - 90 | MYR1.572 | MYR15.72 |
| 100 - 240 | MYR1.327 | MYR13.27 |
| 250 - 490 | MYR1.203 | MYR12.03 |
| 500 + | MYR1.04 | MYR10.40 |
*price indicative
- RS Stock No.:
- 260-5067
- Mfr. Part No.:
- BFQ19SH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 120mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Transition Frequency ft | 5.5GHz | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 3V | |
| Maximum Power Dissipation Pd | 1W | |
| Transistor Polarity | NPN | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Series | BFQ | |
| Standards/Approvals | RoHS | |
| Width | 4.5mm | |
| Length | 4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 120mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum Operating Temperature -65°C | ||
Maximum Transition Frequency ft 5.5GHz | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 3V | ||
Maximum Power Dissipation Pd 1W | ||
Transistor Polarity NPN | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Series BFQ | ||
Standards/Approvals RoHS | ||
Width 4.5mm | ||
Length 4mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon silicon bipolar RF transistor are suitable for low noise, low distortion broadband amplifiers in antenna and telecommunications systems.
Pb free package
For low noise, low distortion broadband amplifiers in antenna and telecommunications systems
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