Infineon BFR181E6327HTSA1 Bipolar Transistor, 20 mA NPN, 20 V, 3-Pin SOT-23
- RS Stock No.:
- 258-7710
- Distrelec Article No.:
- 304-40-490
- Mfr. Part No.:
- BFR181E6327HTSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
MYR19.63
FREE delivery for orders over RM 150.00
In Stock
- 2,350 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | MYR0.785 | MYR19.63 |
| 50 - 75 | MYR0.746 | MYR18.65 |
| 100 - 225 | MYR0.701 | MYR17.53 |
| 250 - 975 | MYR0.652 | MYR16.30 |
| 1000 + | MYR0.60 | MYR15.00 |
*price indicative
- RS Stock No.:
- 258-7710
- Distrelec Article No.:
- 304-40-490
- Mfr. Part No.:
- BFR181E6327HTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 20mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum DC Current Gain hFE | 70 | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 3GHz | |
| Maximum Power Dissipation Pd | 175mW | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 125°C | |
| Series | BAR63 | |
| Width | 2.4mm | |
| Standards/Approvals | RoHS | |
| Length | 2.9mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 20mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum DC Current Gain hFE 70 | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 3GHz | ||
Maximum Power Dissipation Pd 175mW | ||
Minimum Operating Temperature -55°C | ||
Pin Count 3 | ||
Maximum Operating Temperature 125°C | ||
Series BAR63 | ||
Width 2.4mm | ||
Standards/Approvals RoHS | ||
Length 2.9mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.
Pb free RoHS compliant package
VCEO max is 12 V
Related links
- Infineon Bipolar Transistor 20 V, 3-Pin SOT-23
- Infineon Bipolar Transistor 20 V, 4-Pin SOT-143
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- Infineon Bipolar Transistor 20 V, 3-Pin SOT-23
- Infineon BFR182E6327HTSA1 Bipolar Transistor 20 V, 3-Pin SOT-23
- Infineon Bipolar Transistor 20 V, 3-Pin SOT-23
- Infineon RF Bipolar Transistor 20 V, 3-Pin SOT-23
- Infineon BF771E6327HTSA1 RF Bipolar Transistor 20 V, 3-Pin SOT-23