onsemi MJB45H11G Digital Transistor, -80 V PNP 10 A Surface, 2-Pin
- RS Stock No.:
- 186-7405
- Mfr. Part No.:
- MJB45H11G
- Manufacturer:
- onsemi
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Bulk discount available
View bulk pricing optionsSubtotal (50 units, in tubes of 50)*
MYR201.90
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In Stock
- Plus 100 unit(s) shipping from 28 September 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | MYR4.038 | MYR201.90 |
| 100 - 150 | MYR3.949 | MYR197.45 |
| 200 + | MYR3.876 | MYR193.80 |
*price indicative
- RS Stock No.:
- 186-7405
- Mfr. Part No.:
- MJB45H11G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Power Dissipation Pd | 50W | |
| Transistor Polarity | PNP | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1V | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Continuous Collector Current Ic | 10A | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 2 | |
| Height | 8.64mm | |
| Length | 9.65mm | |
| Standards/Approvals | UL 94 V-0 | |
| Series | MJB45H | |
| Width | 4.83mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Power Dissipation Pd 50W | ||
Transistor Polarity PNP | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1V | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Continuous Collector Current Ic 10A | ||
Maximum Operating Temperature 150°C | ||
Pin Count 2 | ||
Height 8.64mm | ||
Length 9.65mm | ||
Standards/Approvals UL 94 V-0 | ||
Series MJB45H | ||
Width 4.83mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
PbFree Packages are Available