onsemi MJB45H11G Digital Transistor, -80 V PNP 10 A Surface, 2-Pin
- RS Stock No.:
- 186-7405
- Mfr. Part No.:
- MJB45H11G
- Manufacturer:
- onsemi
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View bulk pricing optionsSubtotal (1 tube of 50 units)*
MYR201.90
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In Stock
- 100 unit(s) ready to ship from another location
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Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | MYR4.038 | MYR201.90 |
| 100 - 150 | MYR3.949 | MYR197.45 |
| 200 + | MYR3.876 | MYR193.80 |
*price indicative
- RS Stock No.:
- 186-7405
- Mfr. Part No.:
- MJB45H11G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1V | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Continuous Collector Current Ic | 10A | |
| Transistor Polarity | PNP | |
| Pin Count | 2 | |
| Maximum Operating Temperature | 150°C | |
| Height | 8.64mm | |
| Width | 4.83mm | |
| Length | 9.65mm | |
| Series | MJB45H | |
| Standards/Approvals | UL 94 V-0 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1V | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Continuous Collector Current Ic 10A | ||
Transistor Polarity PNP | ||
Pin Count 2 | ||
Maximum Operating Temperature 150°C | ||
Height 8.64mm | ||
Width 4.83mm | ||
Length 9.65mm | ||
Series MJB45H | ||
Standards/Approvals UL 94 V-0 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
PbFree Packages are Available
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