Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Package Type	MicroFET 2 x 2
	Mounting Type	Surface Mount
	Maximum Power Dissipation	2.4 W
	Transistor Configuration	Single
	Pin Count	6
	Number of Elements per Chip	1
	Dimensions	2 x 2 x 0.72mm
	Maximum Operating Temperature	+150 °C

	Select all
	Brand onsemi
	Package Type MicroFET 2 x 2
	Mounting Type Surface Mount
	Maximum Power Dissipation 2.4 W
	Transistor Configuration Single
	Pin Count 6
	Number of Elements per Chip 1
	Dimensions 2 x 2 x 0.72mm
	Maximum Operating Temperature +150 °C

Datasheet

COO (Country of Origin):: TH

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET lead frame.

RDS(on) = 30mΩ @ VGS = 4.5 V, ID = 5.7A
RDS(on) = 40mΩ @ VGS = 2.5 V, ID = 5.0A
Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm
HBM ESD protection level 2.5k V typical (Note 3)
Free from halogenated compounds and antimony oxides
Applications
This product is general usage and suitable for many different applications.

Units	Per Unit	Per Reel*
3000 - 3000	MYR1.302	MYR3,906.00
6000 - 9000	MYR1.273	MYR3,819.00
12000 +	MYR1.249	MYR3,747.00

onsemi FDMA420NZ Digital Transistor, 6-Pin MicroFET 2 x 2

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