onsemi BDV64BG PNP Transistor, -10 A, -100 V, 3-Pin TO-218
- RS Stock No.:
- 184-4188
- Mfr. Part No.:
- BDV64BG
- Manufacturer:
- onsemi
540 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Tube of 30)
MYR13.433
| Units | Per Unit | Per Tube* |
| 30 - 120 | MYR13.433 | MYR402.99 |
| 150 - 270 | MYR13.151 | MYR394.53 |
| 300 + | MYR12.757 | MYR382.71 |
| *price indicative | ||
- RS Stock No.:
- 184-4188
- Mfr. Part No.:
- BDV64BG
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.
High DC Current Gain HFE = 1000 (min.) @ 5 Adc
Monolithic Construction with Built-in Base Emitter Shunt Resistors
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices
Monolithic Construction with Built-in Base Emitter Shunt Resistors
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Transistor Type | PNP |
| Maximum DC Collector Current | -10 A |
| Maximum Collector Emitter Voltage | -100 V |
| Package Type | TO-218 |
| Mounting Type | Through Hole |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 100 V dc |
| Maximum Emitter Base Voltage | 5 V dc |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Dimensions | 15.2 x 4.9 x 20.35mm |
| Maximum Operating Temperature | +150 °C |