onsemi MJF45H11G Transistor, -10 A PNP, -80 V, 3-Pin TO-220
- RS Stock No.:
- 184-0971
- Mfr. Part No.:
- MJF45H11G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (50 units, in tubes of 50)*
MYR260.70
FREE delivery for orders over RM 150.00
In Stock
- Plus 50 unit(s) shipping from 28 September 2026
- Plus 100 unit(s) shipping from 28 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | MYR5.214 | MYR260.70 |
| 100 - 150 | MYR5.099 | MYR254.95 |
| 200 + | MYR5.005 | MYR250.25 |
*price indicative
- RS Stock No.:
- 184-0971
- Mfr. Part No.:
- MJF45H11G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Isolated | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 20MHz | |
| Maximum Power Dissipation Pd | 36W | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 40 | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Length | 0.42mm | |
| Width | 0.19mm | |
| Standards/Approvals | No | |
| Height | 1.18mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Isolated | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 20MHz | ||
Maximum Power Dissipation Pd 36W | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 40 | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Length 0.42mm | ||
Width 0.19mm | ||
Standards/Approvals No | ||
Height 1.18mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
The Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
Low Collector-Emitter Saturation Voltage--VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
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