Nexperia PBSS5160DS,115 Dual PNP Transistor, -1 A, -60 V, 6-Pin TSOP
- RS Stock No.:
- 166-1570
- Mfr. Part No.:
- PBSS5160DS,115
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
MYR2,286.00
MYR2,286.00
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 23 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR0.762 | MYR2,286.00 |
| 6000 - 9000 | MYR0.745 | MYR2,235.00 |
| 12000 + | MYR0.732 | MYR2,196.00 |
*price indicative
- RS Stock No.:
- 166-1570
- Mfr. Part No.:
- PBSS5160DS,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Transistor Type | PNP | |
| Maximum DC Collector Current | -1 A | |
| Maximum Collector Emitter Voltage | -60 V | |
| Package Type | TSOP | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 700 mW | |
| Minimum DC Current Gain | 200 | |
| Transistor Configuration | Isolated | |
| Maximum Collector Base Voltage | 80 V | |
| Maximum Emitter Base Voltage | 5 V | |
| Maximum Operating Frequency | 185 MHz | |
| Pin Count | 6 | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Dimensions | 1 x 3.1 x 1.7mm | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Transistor Type PNP | ||
Maximum DC Collector Current -1 A | ||
Maximum Collector Emitter Voltage -60 V | ||
Package Type TSOP | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 700 mW | ||
Minimum DC Current Gain 200 | ||
Transistor Configuration Isolated | ||
Maximum Collector Base Voltage 80 V | ||
Maximum Emitter Base Voltage 5 V | ||
Maximum Operating Frequency 185 MHz | ||
Pin Count 6 | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 1 x 3.1 x 1.7mm | ||
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
Bipolar Transistors, Nexperia