STMicroelectronics SGT240R70ITK Power Transistor, 700 V N-Channel 10 A Surface Mount TO-252 (D-PAK-3), 3-Pin
- RS Stock No.:
- 898-598
- Mfr. Part No.:
- SGT240R70ITK
- Manufacturer:
- STMicroelectronics
N
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MYR10.96
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Units | Per Unit |
|---|---|
| 1 - 9 | MYR10.96 |
| 10 - 24 | MYR7.14 |
| 25 - 99 | MYR3.88 |
| 100 - 499 | MYR3.76 |
| 500 + | MYR3.69 |
*price indicative
- RS Stock No.:
- 898-598
- Mfr. Part No.:
- SGT240R70ITK
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Power Transistor | |
| Package Type | TO-252 (D-PAK-3) | |
| Maximum Collector Emitter Voltage Vceo | 700V | |
| Mount Type | Surface Mount | |
| Transistor Configuration | N-Channel | |
| Maximum Emitter Base Voltage VEBO | 7V | |
| Maximum Continuous Collector Current Ic | 10A | |
| Maximum Power Dissipation Pd | 77W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Standards/Approvals | ECOPACK2 | |
| Width | 2.38mm | |
| Height | 10.5mm | |
| Series | SGT240R70ITK | |
| Length | 6.22mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Power Transistor | ||
Package Type TO-252 (D-PAK-3) | ||
Maximum Collector Emitter Voltage Vceo 700V | ||
Mount Type Surface Mount | ||
Transistor Configuration N-Channel | ||
Maximum Emitter Base Voltage VEBO 7V | ||
Maximum Continuous Collector Current Ic 10A | ||
Maximum Power Dissipation Pd 77W | ||
Transistor Polarity N-Channel | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Standards/Approvals ECOPACK2 | ||
Width 2.38mm | ||
Height 10.5mm | ||
Series SGT240R70ITK | ||
Length 6.22mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics PowerGaN transistor device provides extremely low conduction losses, high current capability and ultrafast switching operation to enable high power density and unbeatable efficiency performances.
Enhancement mode normally off transistor
High power management capability
Zero reverse recovery charge