onsemi NUP4201DR2G 4-Element Uni-Directional TVS Diode Array, 500 W, 8-Pin SOIC
- RS Stock No.:
- 802-4180
- Mfr. Part No.:
- NUP4201DR2G
- Manufacturer:
- onsemi
This image is representative of the product range
Subtotal (1 pack of 10 units)*
MYR47.92
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 16 October 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 + | MYR4.792 | MYR47.92 |
*price indicative
- RS Stock No.:
- 802-4180
- Mfr. Part No.:
- NUP4201DR2G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Diode Configuration | Complex Array | |
| Product Type | TVS Diode Array | |
| Direction Type | Uni-Directional | |
| Minimum Breakdown Voltage Vbr | 6V | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Peak Pulse Power Dissipation Pppm | 500W | |
| Minimum Operating Temperature | -55°C | |
| Clamping Voltage VC | 25V | |
| Test Current It | 1mA | |
| ESD Protection | Yes | |
| Number of Elements per Chip | 4 | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Maximum Reverse Leakage Current | 10μA | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Diode Configuration Complex Array | ||
Product Type TVS Diode Array | ||
Direction Type Uni-Directional | ||
Minimum Breakdown Voltage Vbr 6V | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Peak Pulse Power Dissipation Pppm 500W | ||
Minimum Operating Temperature -55°C | ||
Clamping Voltage VC 25V | ||
Test Current It 1mA | ||
ESD Protection Yes | ||
Number of Elements per Chip 4 | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Maximum Reverse Leakage Current 10μA | ||
Automotive Standard No | ||
Transient Voltage Suppressors for ESD Protection for High Speed Data
Transient Voltage Suppressors, ON Semiconductor
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