Alliance Memory AS4C32M16SB-7TCN SDRAM 512 MB Surface, 54-Pin 16 bit TSOP

RS Stock No.:: 230-8426
Distrelec Article No.:: 301-51-412
Mfr. Part No.:: AS4C32M16SB-7TCN
Manufacturer:: Alliance Memory

Alliance Memory AS4C32M16SB-7TCN SDRAM 512 MB Surface, 54-Pin 16 bit TSOP

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Subtotal (1 unit)*

MYR65.52

FREE delivery for orders over RM 500.00

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Plus 124 unit(s) shipping from 02 February 2026

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Units	Per Unit
1 - 9	MYR65.52
10 - 24	MYR60.59
25 - 49	MYR59.84
50 - 74	MYR59.10
75 +	MYR57.89

*price indicative

RS Stock No.:: 230-8426
Distrelec Article No.:: 301-51-412
Mfr. Part No.:: AS4C32M16SB-7TCN
Manufacturer:: Alliance Memory

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Alliance Memory
	Memory Size	512MB
	Product Type	SDRAM
	Organisation	32M x 16 Bit
	Data Bus Width	16bit
	Address Bus Width	13bit
	Number of Bits per Word	16
	Maximum Clock Frequency	166MHz
	Maximum Random Access Time	5.4ns
	Number of Words	8K
	Mount Type	Surface
	Package Type	TSOP
	Minimum Operating Temperature	0°C
	Pin Count	54
	Maximum Operating Temperature	70°C
	Standards/Approvals	No
	Height	1.2mm
	Length	22.35mm
	Width	10.29 mm
	Minimum Supply Voltage	3V
	Maximum Supply Voltage	3.6V
	Automotive Standard	No

	Select all
	Brand Alliance Memory
	Memory Size 512MB
	Product Type SDRAM
	Organisation 32M x 16 Bit
	Data Bus Width 16bit
	Address Bus Width 13bit
	Number of Bits per Word 16
	Maximum Clock Frequency 166MHz
	Maximum Random Access Time 5.4ns
	Number of Words 8K
	Mount Type Surface
	Package Type TSOP
	Minimum Operating Temperature 0°C
	Pin Count 54
	Maximum Operating Temperature 70°C
	Standards/Approvals No
	Height 1.2mm
	Length 22.35mm
	Width 10.29 mm
	Minimum Supply Voltage 3V
	Maximum Supply Voltage 3.6V
	Automotive Standard No

Datasheet - AS4C32M16SB-7TCN

The Alliance Memory 512Mb SDRAM is a high-speed CMOS synchronous DRAM containing 512 Mbits. It is internally configured as 4 Banks of 8M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a Bank Activate command which is then followed by a Read or Write command.

Auto Refresh and Self Refresh

8192 refresh cycles/64ms

CKE power down mode

Single +3.3V ±0.3V power supply

Alliance Memory AS4C32M16SB-7TCN SDRAM 512 MB Surface, 54-Pin 16 bit TSOP

FREE delivery for orders over RM 500.00

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