Intelligent Memory IM4G16D3FDBG-107I SDRAM 4 GB Surface, 96-Pin 16 bit FBGA-96 Ball
- RS Stock No.:
- 588-637
- Mfr. Part No.:
- IM4G16D3FDBG-107I
- Manufacturer:
- Intelligent Memory
Subtotal (1 unit)*
MYR254.82
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In Stock
- 5 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 + | MYR254.82 |
*price indicative
- RS Stock No.:
- 588-637
- Mfr. Part No.:
- IM4G16D3FDBG-107I
- Manufacturer:
- Intelligent Memory
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Intelligent Memory | |
| Memory Size | 4GB | |
| Product Type | SDRAM | |
| Organisation | 32M x 16 | |
| Data Bus Width | 16bit | |
| Maximum Clock Frequency | 1066MHz | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 0.9ns | |
| Number of Words | 32 | |
| Mount Type | Surface | |
| Package Type | FBGA-96 Ball | |
| Pin Count | 96 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 95°C | |
| Standards/Approvals | RoHS | |
| Width | 7.5mm | |
| Series | IM4G16D3FDB | |
| Length | 13.5mm | |
| Minimum Supply Voltage | 1.28V | |
| Maximum Supply Voltage | 1.45V | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand Intelligent Memory | ||
Memory Size 4GB | ||
Product Type SDRAM | ||
Organisation 32M x 16 | ||
Data Bus Width 16bit | ||
Maximum Clock Frequency 1066MHz | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 0.9ns | ||
Number of Words 32 | ||
Mount Type Surface | ||
Package Type FBGA-96 Ball | ||
Pin Count 96 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 95°C | ||
Standards/Approvals RoHS | ||
Width 7.5mm | ||
Series IM4G16D3FDB | ||
Length 13.5mm | ||
Minimum Supply Voltage 1.28V | ||
Maximum Supply Voltage 1.45V | ||
Automotive Standard AEC-Q100 | ||
- COO (Country of Origin):
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling