Intelligent Memory IME1G16D2DEBG-25I SDRAM 1 GB Surface, 84-Pin 16 bit FBGA-84 Ball
- RS Stock No.:
- 588-599
- Mfr. Part No.:
- IME1G16D2DEBG-25I
- Manufacturer:
- Intelligent Memory
Subtotal (1 unit)*
MYR138.88
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In Stock
- 50 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 + | MYR138.88 |
*price indicative
- RS Stock No.:
- 588-599
- Mfr. Part No.:
- IME1G16D2DEBG-25I
- Manufacturer:
- Intelligent Memory
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Intelligent Memory | |
| Memory Size | 1GB | |
| Product Type | SDRAM | |
| Organisation | 128M x 8 | |
| Data Bus Width | 16bit | |
| Number of Bits per Word | 64 | |
| Maximum Clock Frequency | 533MHz | |
| Maximum Random Access Time | 2.5ns | |
| Number of Words | 16777216 | |
| Mount Type | Surface | |
| Package Type | FBGA-84 Ball | |
| Pin Count | 84 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 95°C | |
| Standards/Approvals | JEDEC, RoHS | |
| Width | 8mm | |
| Series | IME1G | |
| Automotive Standard | AEC-Q100 | |
| Minimum Supply Voltage | 1.7V | |
| Maximum Supply Voltage | 1.9V | |
| Select all | ||
|---|---|---|
Brand Intelligent Memory | ||
Memory Size 1GB | ||
Product Type SDRAM | ||
Organisation 128M x 8 | ||
Data Bus Width 16bit | ||
Number of Bits per Word 64 | ||
Maximum Clock Frequency 533MHz | ||
Maximum Random Access Time 2.5ns | ||
Number of Words 16777216 | ||
Mount Type Surface | ||
Package Type FBGA-84 Ball | ||
Pin Count 84 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 95°C | ||
Standards/Approvals JEDEC, RoHS | ||
Width 8mm | ||
Series IME1G | ||
Automotive Standard AEC-Q100 | ||
Minimum Supply Voltage 1.7V | ||
Maximum Supply Voltage 1.9V | ||
- COO (Country of Origin):
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling