Alliance Memory AS4C128M16MD4V-062BAN SDRAM 2 GB Surface, 200-Pin 16 bit 200-Ball TFBGA
- RS Stock No.:
- 425-214
- Mfr. Part No.:
- AS4C128M16MD4V-062BAN
- Manufacturer:
- Alliance Memory
Subtotal (1 tray of 136 units)*
MYR5,992.024
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 03 November 2026
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Units | Per Unit | Per Tray* |
|---|---|---|
| 136 + | MYR44.059 | MYR5,992.02 |
*price indicative
- RS Stock No.:
- 425-214
- Mfr. Part No.:
- AS4C128M16MD4V-062BAN
- Manufacturer:
- Alliance Memory
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Alliance Memory | |
| Product Type | SDRAM | |
| Memory Size | 2GB | |
| Data Bus Width | 16bit | |
| Maximum Clock Frequency | 1600MHz | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 3.5ns | |
| Mount Type | Surface | |
| Package Type | 200-Ball TFBGA | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 200 | |
| Maximum Operating Temperature | 105°C | |
| Length | 14.60mm | |
| Series | AS4C128M16MD4V | |
| Standards/Approvals | RoHS, JEDEC | |
| Height | 0.8mm | |
| Automotive Standard | No | |
| Maximum Supply Voltage | 1.06V | |
| Minimum Supply Voltage | 1.95V | |
| Select all | ||
|---|---|---|
Brand Alliance Memory | ||
Product Type SDRAM | ||
Memory Size 2GB | ||
Data Bus Width 16bit | ||
Maximum Clock Frequency 1600MHz | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 3.5ns | ||
Mount Type Surface | ||
Package Type 200-Ball TFBGA | ||
Minimum Operating Temperature -40°C | ||
Pin Count 200 | ||
Maximum Operating Temperature 105°C | ||
Length 14.60mm | ||
Series AS4C128M16MD4V | ||
Standards/Approvals RoHS, JEDEC | ||
Height 0.8mm | ||
Automotive Standard No | ||
Maximum Supply Voltage 1.06V | ||
Minimum Supply Voltage 1.95V | ||
- COO (Country of Origin):
- TW
The Alliance Memory DDR4 SDRAM is a high-speed dynamic random-access memory internally organized with eight-banks. DDR4 SDRAM uses a 8n prefect architecture to achieve high-speed operation. Operation begins with the registration of an Activate Command, which is then followed by a Read or Write command.
ZQ Calibration
JEDEC Standard Compliant
Write Leveling
RoHS compliant
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