Infineon 650 V 4 A Diode 2-Pin D2PAK IDK04G65C5XTMA2
- RS Stock No.:
- 258-0958
- Mfr. Part No.:
- IDK04G65C5XTMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
MYR14.55
FREE delivery for orders over RM 500.00
In Stock
- 998 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | MYR7.275 | MYR14.55 |
| 10 - 98 | MYR6.555 | MYR13.11 |
| 100 - 248 | MYR6.02 | MYR12.04 |
| 250 - 498 | MYR5.265 | MYR10.53 |
| 500 + | MYR4.76 | MYR9.52 |
*price indicative
- RS Stock No.:
- 258-0958
- Mfr. Part No.:
- IDK04G65C5XTMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDK04G65C5 | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 215A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.2V | |
| Peak Reverse Current Ir | 500μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDK04G65C5 | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 215A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.2V | ||
Peak Reverse Current Ir 500μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1, RoHS | ||
Automotive Standard No | ||
The Infineon 5th generation thinQ! SiC Schottky diode is proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ!™ generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
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- STMicroelectronics 650 V 4 A Diode 2-Pin D2PAK STPSC4H065B-TR
- Infineon 650 V 6 A Rectifier & Schottky Diode 3-Pin D2PAK
- Infineon 650 V 20 A Schottky Barrier Diode Schottky 10-Pin D2PAK
- Infineon 650 V 4 A Rectifier & Schottky Diode Rectifier Diode 2-Pin TO-220