onsemi 1.2 kV 2 A Schottky Diode & Rectifier 2-Pin TO-220-2 UJ3D1202TS
- RS Stock No.:
- 648-514
- Mfr. Part No.:
- UJ3D1202TS
- Manufacturer:
- onsemi
Subtotal (1 bag of 2 units)*
MYR34.66
FREE delivery for orders over RM 150.00
In Stock
- Plus 950 unit(s) shipping from 19 October 2026
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Units | Per Unit | Per Bag* |
|---|---|---|
| 2 + | MYR17.33 | MYR34.66 |
*price indicative
- RS Stock No.:
- 648-514
- Mfr. Part No.:
- UJ3D1202TS
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Schottky Diode & Rectifier | |
| Mount Type | Through Hole | |
| Package Type | TO-220-2 | |
| Maximum Continuous Forward Current If | 2A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Series | UJ3 | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.6V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 22μA | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.16mm | |
| Width | 4.19mm | |
| Height | 15.37mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Schottky Diode & Rectifier | ||
Mount Type Through Hole | ||
Package Type TO-220-2 | ||
Maximum Continuous Forward Current If 2A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Series UJ3 | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.6V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 30A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 22μA | ||
Maximum Operating Temperature 175°C | ||
Length 10.16mm | ||
Width 4.19mm | ||
Height 15.37mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Easy paralleling
Extremely fast switching not dependent on temperature
No reverse or forward recovery
100% UIS tested
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