Essential and Operational Technologies

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Units	Per Unit	Per Tube**
25 - 25	MYR8.692	MYR217.30
50 - 75	MYR8.558	MYR213.95
100 +	MYR8.391	MYR209.775

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	110 A
	Maximum Drain Source Voltage	55 V
	Package Type	TO-247AC
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	200 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	170 nC @ 10 V
	Transistor Material	Si
	Width	5.3mm
	Length	15.9mm
	Height	20.3mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 110 A
	Maximum Drain Source Voltage 55 V
	Package Type TO-247AC
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 200 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 170 nC @ 10 V
	Transistor Material Si
	Width 5.3mm
	Length 15.9mm
	Height 20.3mm
	Minimum Operating Temperature -55 °C

Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC IRFP064NPBF

FREE delivery for orders over MYR500.00

N-Channel Power MOSFET 55V, Infineon

Infineon HEXFET Series MOSFET, 110A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRFP064NPBF

Features & Benefits

Applications

What is the maximum power dissipation for this component?

Can it operate in high-temperature environments?

What type of gate voltage is required for operation?

How does the channel type influence its performance?

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