Wolfspeed Type N-Channel MOSFET, 5 A, 1700 V Enhancement, 3-Pin TO-247 C2M1000170D
- RS Stock No.:
- 904-7345P
- Mfr. Part No.:
- C2M1000170D
- Manufacturer:
- Wolfspeed
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- RS Stock No.:
- 904-7345P
- Mfr. Part No.:
- C2M1000170D
- Manufacturer:
- Wolfspeed
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 69W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Forward Voltage Vf | 3.8V | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Width | 5.21 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 69W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Forward Voltage Vf 3.8V | ||
Maximum Operating Temperature 150°C | ||
Height 21.1mm | ||
Length 16.13mm | ||
Width 5.21 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation