N-Channel MOSFET, 6.1 A, 60 V, 8-Pin SOIC onsemi FDS5351
- RS Stock No.:
- 903-4178
- Mfr. Part No.:
- FDS5351
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 25 units)**
MYR64.85
2375 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
---|---|---|
25 - 600 | MYR2.594 | MYR64.85 |
625 - 1225 | MYR2.117 | MYR52.925 |
1250 + | MYR1.846 | MYR46.15 |
**price indicative
- RS Stock No.:
- 903-4178
- Mfr. Part No.:
- FDS5351
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 6.1 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOIC | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 58.8 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Length | 4.9mm | |
Maximum Operating Temperature | +150 °C | |
Width | 3.9mm | |
Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
Transistor Material | Si | |
Height | 1.57mm | |
Forward Diode Voltage | 1.3V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.1 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 58.8 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 4.9mm | ||
Maximum Operating Temperature +150 °C | ||
Width 3.9mm | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Transistor Material Si | ||
Height 1.57mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
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